FDT86106LZ n-channel powertrench ? mosfet ?2013 fairchild semiconductor corporation FDT86106LZ rev.c2 www.fairchildsemi.com 1 january 2013 FDT86106LZ n-channel powertrench ? mosfet 100 v, 3.2 a, 108 m features ? max r ds(on) = 108 m at v gs = 10 v, i d = 3.2 a ? max r ds(on) = 153 m at v gs = 4.5 v, i d = 2.7 a ? high performance trench technol ogy for extremely low r ds(on) ? high power and current handling capability in a widely used surface mount package ? hbm esd protection level > 3 kv typical (note 4) ? 100% uil tested ? rohs compliant general description this n-channel logic level mosfets are produced using fairchild semiconductor?s advanced power trench ? process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. g-s zener has been added to enhance esd voltage level. application ? dc - dc conversion g d s d sot-22 3 mosfet maximum ratings t c = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current -continuous t a = 25 c (note 1a) 3.2 a -pulsed 12 e as single pulse avalanche energy (note 3) 12 mj p d power dissipation t a = 25 c (note 1a) 2.2 w power dissipation t a = 25 c (note 1b) 1.0 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 12 c/w r ja thermal resistance, junction to ambient (note 1a) 55 device marking device package reel size tape width quantity 86106lz FDT86106LZ sot-223 13 ?? 12 mm 2500 units
FDT86106LZ n-channel powertrench ? mosfet FDT86106LZ rev.c2 www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics (note 2) dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 100 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 71 mv/c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.5 2.2 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -5 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 3.2 a 80 108 m v gs = 4.5 v, i d = 2.7 a 100 153 v gs = 10 v, i d = 3.2 a, t j = 125 c 140 189 g fs forward transconductance v ds = 10 v, i d = 3.2 a 8 s c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1 mhz 234 315 pf c oss output capacitance 46 65 pf c rss reverse transfer capacitance 3.1 5 pf t d(on) turn-on delay time v dd = 50 v, i d = 3.2 a, v gs = 10 v, r gen = 6 3.8 10 ns t r rise time 1.3 10 ns t d(off) turn-off delay time 10 20 ns t f fall time 1.5 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 50 v, i d = 3.2 a 4.3 7 nc q g total gate charge v gs = 0 v to 5 v 2.4 4 nc q gs gate to source gate charge 0.7 nc q gd gate to drain ?miller? charge 0.9 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 3.2 a (note 2) 0.86 1.3 v v gs = 0 v, i s = 1 a (note 2) 0.77 1.2 t rr reverse recovery time i f = 3.2 a, di/dt = 100 a/ s 31 49 ns q rr reverse recovery charge 21 34 nc notes : 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user?s board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c, l = 1 mh, i as = 5 a, v dd = 90 v, v gs = 10 v. 4. the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied . 55 c/w when mounted on a 1 in 2 pad of 2 oz copper a) 118 c/w when mounted on a minimum pad of 2 oz copper b)
FDT86106LZ n-channel powertrench ? mosfet FDT86106LZ rev.c2 www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 3 6 9 12 v gs = 3 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 4 v v gs = 3.5 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 03691 2 0 1 2 3 4 5 v gs = 3 v v gs = 4 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 3.2 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 100 200 300 400 500 t j = 125 o c i d = 3.2 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 3 6 9 12 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 20 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDT86106LZ n-channel powertrench ? mosfet FDT86106LZ rev.c2 www.fairchildsemi.com 4 figure 7. 012345 0 2 4 6 8 10 i d = 3.2 a v dd = 50 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 75 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 400 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 2 1 2 3 4 5 6 7 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 0 5 10 15 20 25 30 35 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 v ds = 0 v t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) i g , gate leakage current (a) g a t e l e a k a g e c u r r e n t v s g a t e t o source voltage figure 11. 25 50 75 100 125 150 0 2 4 6 8 limited by package v gs = 4.5 v r t jc = 12 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature figure 12. 0.1 1 10 100 400 0.01 0.1 1 10 20 10 s 100 us 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 118 o c/w t a = 25 o c f o r w a r d b i a s s a f e operating area typical characteristics t j = 25 c unless otherwise noted
FDT86106LZ n-channel powertrench ? mosfet FDT86106LZ rev.c2 www.fairchildsemi.com 5 figure 13. 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.5 1 10 100 300 p (pk) , peak transient power (w) single pulse r t ja = 118 o c/w t a = 25 o c t, pulse width (sec) single pulse maximum power dissipation figure 14. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 118 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
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